IRF1405S/L
D 2 Pak Tape & Reel Information
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
1.60 (.063)
1.50 (.059)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
11.60 (.457)
11.40 (.449)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
1.75 (.069)
10.90 (.429)
10.70 (.421)
1.25 (.049)
16.10 (.634)
4.72 (.136)
4.52 (.178)
15.90 (.626)
FEED DIRECTION
330.00
(14.173)
MAX.
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
60.00 (2.362)
MIN.
Notes:
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
? Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
? Starting T J = 25°C, L = 0.11mH
R G = 25 ? , I AS = 101A. (See Figure 12).
? I SD ≤ 101A, di/dt ≤ 210A/μs, V DD ≤ V (BR)DSS ,
T J ≤ 175°C
? Pulse width ≤ 400μs; duty cycle ≤ 2%.
? C oss eff. is a fixed capacitance that gives the same charging time
as C oss while V DS is rising from 0 to 80% V DSS .
? Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
? Limited by T Jmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
? This is applied to D 2 Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Data and specifications subject to change without notice.
This product has been designed and qualified for the industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information . 12/04
www.irf.com
11
相关PDF资料
IRF2807STRL MOSFET N-CH 75V 82A D2PAK
IRF3205STRR MOSFET N-CH 55V 110A D2PAK
IRF3315STRR MOSFET N-CH 150V 21A D2PAK
IRF3315 MOSFET N-CH 150V 27A TO-220AB
IRF3415STRR MOSFET N-CH 150V 43A D2PAK
IRF3515STRR MOSFET N-CH 150V 41A D2PAK
IRF3610SPBF MOSFET N-CH 100V 103A D2PAK
IRF3704STRR MOSFET N-CH 20V 77A D2PAK
相关代理商/技术参数
IRF1405STRRHR 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 55V 131A 3-Pin(2+Tab) D2PAK T/R
IRF1405STRRPBF 功能描述:MOSFET 55V 1 N-CH HEXFET 5.3mOhms 170nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRF1405Z 功能描述:MOSFET N-CH 55V 75A TO-220AB RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
IRF1405ZHR 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 55V 150A 3-Pin(3+Tab) TO-220AB
IRF1405ZL 功能描述:MOSFET N-CH 55V 75A TO-262 RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
IRF1405ZL-7P 制造商:IRF 制造商全称:International Rectifier 功能描述:AUTOMOTIVE MOSFET
IRF1405ZL-7PPBF 功能描述:MOSFET MOSFT 55V 150A 4.9mOhm 120nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRF1405ZLPBF 功能描述:MOSFET MOSFT 55V 150A 4.9mOhm 120nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube